ヤナセ　タカシ   Yanase Takashi   柳瀨　隆    所属   東邦大学  理学部 化学科    職種   講師
論文種別	原著
言語種別	英語
査読の有無	査読あり
表題	SiO2/Si Structure Having Low Leakage Current Fabricated by Nitric Acid Oxidation Method with Si Source
掲載誌名	正式名：ELECTROCHEMICAL AND SOLID STATE LETTERS ISSNコード：1099-0062/1944-8775
出版社	ELECTROCHEMICAL SOC INC
巻・号・頁	13(7),pp.H253-H256
著者・共著者	Takashi Yanase,Taketoshi Matsumoto,Hikaru Kobayashi
発行年月	2010/05/10
概要	We have developed a fabrication method of a relatively thick (i.e., 3-8 nm) SiO2/Si structure at 120 degrees C by using 70 wt % nitric acid solutions that contain polysilazane films. The plot of the etching rate of the fabricated SiO2 layer with HF vs time consists of two linear lines with the initial etching rate higher than the subsequent etching rate. It is concluded that the bulk and interfacial SiO2 regions with the higher and lower etching rates, respectively, are formed by a surface reaction of dissolving Si species in HNO3 with oxidizing species (i.e., oxygen atoms and/or dissociated oxygen ions formed by decomposition of nitric acid) and direct Si oxidation by HNO3. The density of the leakage current flowing through SiO2 is much lower than that of chemical vapor deposition SiO2 films mainly because of the uniform SiO2 thickness and excellent interfacial characteristics. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3424885] All rights reserved.
DOI	10.1149/1.3424885
NAID	80021149330
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