ヤナセ　タカシ   Yanase Takashi   柳瀨　隆    所属   東邦大学  理学部 化学科    職種   講師
論文種別	原著
言語種別	英語
査読の有無	査読あり
表題	Chemical Vapor Deposition of MoS2: Insight Into the Growth Mechanism by Separated Gas Flow Experiments
掲載誌名	正式名：JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ISSNコード：1533-4880/1533-4899
出版社	AMER SCIENTIFIC PUBLISHERS
巻・号・頁	16(4),pp.3223-3227
著者・共著者	Takashi Yanase,Sho Watanabe,Mengting Weng,Taro Nagahama,Toshihiro Shimada
発行年月	2016/04
概要	We report detailed experiments on chemical vapor deposition of an atomic layer semiconductor MoS2. We developed a new type of CVD system in which MoO3 and S sources are separately supplied to the substrates. It has become possible to precisely control the supply of the materials separately in the order of seconds. Raman and XPS analysis of the films grown under various conditions revealed that the initially obtained films are S-deficient and complete stoichiometry is reached after several minutes under S vapor flow.
DOI	10.1166/jnn.2016.12313
PermalinkURL	https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84969261028&origin=inward