ヤナセ　タカシ   Yanase Takashi   柳瀨　隆    所属   東邦大学  理学部 化学科    職種   講師
論文種別	原著
言語種別	英語
査読の有無	査読あり
表題	Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
掲載誌名	正式名：SCIENTIFIC REPORTS ISSNコード：2045-2322
出版社	NATURE PUBLISHING GROUP
巻・号・頁	7
著者・共著者	Nozomi Takahashi,Teodor Huminiuc,Yuta Yamamoto,Takashi Yanase,Toshihiro Shimada,Atsufumi Hirohata,Taro Nagahama
発行年月	2017/08
概要	The application of magnetic oxides in spintronics has recently attracted much attention. The epitaxial growth of magnetic oxide on Si could be the first step of new functional spintronics devices with semiconductors. However, epitaxial spinel ferrite films are generally grown on oxide substrates, not on semiconductors. To combine oxide spintronics and semiconductor technology, we fabricated Fe3O4 films through epitaxial growth on a Si(111) substrate by inserting a gamma-Al2O3 buffer layer. Both of gamma-Al2O3 and Fe3O4 layer grew epitaxially on Si and the films exhibited the magnetic and electronic properties as same as bulk. Furthermore, we also found the buffer layer dependence of crystal structure of Fe3O4 by X-ray diffraction and high-resolution transmission electron microscope. The Fe3O4 films on an amorphous-Al2O3 buffer layer grown at room temperature grew uniaxially in the (111) orientation and had a textured structure in the plane. When Fe3O4 was deposited on Si(111) directly, the poly-crystal Fe3O4 films were obtained due to SiOx on Si substrate. The epitaxial Fe3O4 layer on Si substrates enable us the integration of highly functional spintoronic devices with Si technology.
DOI	10.1038/s41598-017-07104-z