ヤナセ　タカシ   Yanase Takashi   柳瀨　隆    所属   東邦大学  理学部 化学科    職種   講師
論文種別	原著
言語種別	英語
査読の有無	査読あり
表題	Low temperature fabrication of 5-10 nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
掲載誌名	正式名：APPLIED SURFACE SCIENCE ISSNコード：0169-4332
出版社	ELSEVIER SCIENCE BV
巻・号・頁	256(18),pp.5610-5613
著者・共著者	Yousuke Fukaya,Takashi Yanase,Yasushi Kubota,Shigeki Imai,Taketoshi Matsumoto,Hikaru Kobayashi
発行年月	2010/07
概要	We have developed the advanced nitric acid oxidation of Si (NAOS) method to form relatively thick (5-10 nm) SiO2/Si structure with good electrical characteristics. This method simply involves immersion of Si in 68 wt% nitric acid aqueous solutions at 120 degrees C with polysilazane films. Fourier transform infrared absorption (FT-IR) measurements show that the atomic density of the NAOS SiO2 layer is considerably high even without post-oxidation anneal (POA), i.e., 2.28 x 10(22) atoms/cm(2), and it increases by POA at 400 degrees C in wet-oxygen (2.32 x 10(22) atoms/cm(2)) or dry-oxygen (2.30 x 10(22) atoms/cm(2)). The leakage current density is considerably low (e. g., 10(-5) A/cm(2) at 8 MV/cm) and it is greatly decreased (10(-8) A/cm(2) at 8 MV/cm) by POA at 400 degrees C in wet-oxygen. POA in wet-oxygen increases the atomic density of the SiO2 layer, and decreases the density of oxide fixed positive charges. (C) 2010 Elsevier B. V. All rights reserved.
DOI	10.1016/j.apsusc.2010.03.032
PermalinkURL	http://ac.els-cdn.com/S0169433210003235/1-s2.0-S0169433210003235-main.pdf?_tid=0818aa90-587c-11e2-a641-00000aacb360&acdnat=1357530231_41556ade615ba4d893c95e8bbcdefc86