ヤナセ　タカシ   Yanase Takashi   柳瀨　隆    所属   東邦大学  理学部 化学科    職種   講師
論文種別	原著
言語種別	英語
査読の有無	査読あり
表題	Chemical Vapor Deposition of NbS2 from a Chloride Source with H-2 Flow: Orientation Control of Ultrathin Crystals Directly Grown on SiO2/Si Substrate and Charge Density Wave Transition
掲載誌名	正式名：CRYSTAL GROWTH & DESIGN ISSNコード：1528-7483/1528-7505
出版社	AMER CHEMICAL SOC
巻・号・頁	16(8),pp.4467-4472
著者・共著者	Takashi Yanase,Sho Watanabe,Mengting Weng,Makoto Wakeshima,Yukio Hinatsu,Taro Nagahama,Toshihiro Shimada
発行年月	2016/08
概要	This article reports the growth and characterization of z-axis-oriented NbS2 thin films on SiO2/Si substrate by ambient pressure chemical vapor deposition (CVD) using a generic metal chloride source. We found that NbS2 nanosheets can be grown directly on the SiO2/Si substrate with the aid of hydrogen gas mixed in the carrier gas. Detailed examination Of the growth parameters was made possible using a separate-flow CVD apparatus. It appears that the major cause of the misorientation is the off-stoichiometry with surplus Nb. The quality of the films was evaluated by X-ray diffraction and Raman spectroscopy as well as resistivity measurements at low temperatures. They showed a resistivity minimum at the same temperature of the charge density wave (CDW) transition for a bulk single crystal of 3R-NbS2.
DOI	10.1021/acs.cgd.6b00601
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