ヤナセ　タカシ   Yanase Takashi   柳瀨　隆    所属   東邦大学  理学部 化学科    職種   講師
論文種別	原著
言語種別	英語
査読の有無	査読あり
表題	Healing Sulfur Vacancies in Monolayer MoS2 by High-Pressure Sulfur and Selenium Annealing: Implication for High-Performance Transistors
掲載誌名	正式名：ACS Applied Nano Materials ISSNコード：2574-0970
出版社	American Chemical Society ({ACS})
巻・号・頁	3(10),pp.10462-10469
著者・共著者	Takashi Yanase,Fumiya Uehara,Itsuki Naito,Taro Nagahama,Toshihiro Shimada
発行年月	2020/10/23
概要	Developing a technology to terminate chalcogen vacancies for transition-metal dichalcogenides is a crucial task for applications, such as transistors, diodes, and sensors, because chalcogen vacancies degrade the electronic and optical properties. This article reports a healing method of S vacancies in MoS2 by high-pressure annealing under a S vapor pressure of 5 atm. The crystal quality after mechanical transfer, S annealing, and vacuum annealing was systematically studied by observing the photoluminescence (PL). The remarkable recovery of the A-exciton emission peak in the PL spectrum indicated repair of the crystal quality in MoS2 by the S annealing. We also demonstrated that the S vacancies could be terminated by Se atoms using a high-pressure annealing method. The crystal quality of MoS2(1-x)Se2x alloys was confirmed by transmission electron microscopy and electron diffraction.
DOI	10.1021/acsanm.0c02385
ORCIDのPut Code	81050659